IGBT K50H603 TO-247 — 600 V / 50 A — High Efficiency IKW50N60H3

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🔧 IGBT K50H603 / IKW50N60H3 – High efficiency for fast switching

N-channel insulated gate bipolar transistor (IGBT) with Trench Field Stop technology, ideal for inverters, switching power supplies, and induction furnaces. It offers low VCE(sat) and excellent high-frequency switching capability.

📐 Technical specifications:

• Type: IGBT (Insulated Gate Bipolar Transistor)
• Collector-emitter voltage (Vces): 600 V
• Collector current (Ic): 50 A
• Encapsulation: TO-247
• Door Type: N Channel, Trench Field Stop
• Operating temperature range: -55°C to +150°C
• Max gate-emitter voltage: ±20 V
• Typical Vce(sat) voltage drop: 1.85 V @ 25 °C
• Switching frequency: High frequency

📦 Typical applications:

• Power inverters
• Switching power supplies
• Induction cooktops
• Welding plants
• Industrial chargers and more

📄 View technical data sheet (PDF)

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