IGBT H30PR5 / IHW30N135R5 – 1350 V / 30–60 A TO-247 TrenchStop Infineon

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🔧 IGBT H30PR5 (IHW30N135R5) – High efficiency for resonant switching

IGBT with integrated monolithic diode, designed for soft switching in applications such as induction cookers, high-frequency inverters, and resonant power supplies. Uses Infineon's TrenchStop™ technology to minimize losses and EMI.

📐 Technical specifications:

• Collector-emitter voltage (Vces): 1350 V
• Collector current (Ic): 30 A continuous, up to 60 A pulsed
• Non-repetitive peak current: 200 A
• Gate-emitter voltage: ±20 V (max. ±25 V transient)
• Voltage drop Vce(sat): 1.65 V @ 30 A (25 °C)
• Gate charge Qg: 235 nC
• Dissipated power: up to 330 W
• Encapsulation: TO-247
• Operating range: -40°C to +175°C

📄 View technical data sheet (PDF) 📄

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